Seoul: SK hynix Inc. announced Thursday the commencement of mass production for the world's inaugural triple-level cell-based 321-layer NAND flash memory chips. This technological advancement marks a significant milestone in the non-volatile memory storage sector, which is fundamental to the operation of memory cards, USB drives, solid-state drives (SSDs), and smartphones, providing essential data storage and transfer capabilities.According to Yonhap News Agency, SK hynix has set a new benchmark by becoming the first company to produce NAND flash memory with over 300 layers. This achievement builds upon the company's prior success with its 238-layer product, which began mass production in June 2023. The firm plans to initiate customer deliveries of the 321-layer NAND products in the first half of the coming year, further positioning itself at the forefront of innovation in the AI storage market. This market is increasingly dominated by SSDs designed for AI data centers and on-device applications, indicating a promising future for SK hynix in this rapidly evolving field.
- October 12, 2026
